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SRFET
AO4932 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
The AO4932 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4932 is Pb-free (meets ROHS & Sony 259 specifications).
Features
FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8m RDS(ON) < 19.6m FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8m (VGS = 10V) <23m (V GS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage 12 Continuous Drain Current AF Pulsed Drain Current B Avalanche Current
C C
Max FET2 30 20 9.0 7.2 40 16 38 2.0 1.3 -55 to 150
Units V V A A A mJ W C
TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C
9.0 7.2 40 16 38 2.0 1.3 -55 to 150
Repetitive avalanche energy L=0.3mH Power Dissipation TA=70C
Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=9A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9A TJ=125C 1.5 40 13 20.2 16 64 0.4 0.6 4.5 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 224 92 1.6 24 VGS=10V, V DS=15V, ID=9A 12.0 3.9 4.2 5.5 VGS=10V, V DS=15V, R L=1.7, RGEN=3 IF=9A, dI/dt=300A/s IF=9A, dI/dt=300A/s
2
Min 30
Typ
Max
Units V
0.01 5 1.8
0.1 10 0.1 2.4 15.8 25.2 19.6
mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
1885
3.0 31 16
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
nC nC nC ns ns ns ns
4.7 24.0 4.0 10 6.8 12
ns nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev 2: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 60 4.5V 4V 30 25 20 ID (A) 40 ID(A) 3.5V 15 10 VGS=3V 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7A ID=9A VGS=10V VGS(Volts) Figure 2: Transfer Characteristics 125 VDS=5V
20
25C
0
DYNAMIC
20
17 RDS(ON) (m)
14
11
VGS=10V
8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 45 40 35 RDS(ON) (m) 125C IS (A) 30 25 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-03 1.0E-04 ID=9A
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 25C 125C
Alpha & Omega Semiconductor, Ltd.
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AO4932
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 2500 2000 Capacitance (pF) 1500 1000 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss
VDS=15V ID=9A
Ciss
DYNAMIC PARAMETERS
100.0
50 10s 40 Power (W) 30 20 10 TJ(Max)=175C TC=25C
10.0 ID (Amps) RDS(ON) limited 10ms TJ(Max)=150C TA=25C 1ms DC
100
1.0
0.1
0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.0001
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.001
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001 0.0001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1.0E-02 VDS=24V IR (A) 1.0E-03 VSD(V) VDS=12V 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode PARAMETERS Reverse Leakage Current vs. Junction Temperature 12 di/dt=800A/us 125C 10 8 25C Qrr Irm 125C 25C Irm (A) trr (ns) 6 4 2 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 20 Qrr (nC) 15 10 5 0 0 Qrr Irm 200 400 600 800 10 8 125C trr (ns) 25C 125 Irm (A) 6 4 2 0 1000 15 125C 12 25C 9 trr 6 3 0 0 200 400 600 800 25C 125C S 1 0.5 0 1000 1.5 S Is=20A 2 12 10 8 trr 6 4 2 0 0 5 10 15 S 125C 20 25 30 25C di/dt=800A/us 125C 0 50 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 2.5 2 1.5 1 0.5 0 50 IS=1A 10A 5A 20A
DYNAMIC
30 25 20 Qrr (nC) 15 10 5 0
25C
Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current
2.5
Is=20A
25C
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
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S
AO4932
FET2 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=9A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=30V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=9A TJ=125C 1.3 40 13 19 18.6 23 0.75 1 3 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.5 17 VGS=10V, V DS=15V, ID=9A 9 3.4 4.7 5 VGS=10V, V DS=15V, R L=1.7, RGEN=3 IF=9A, dI/dt=100A/s IF=9A, dI/dt=100A/s
2
Min 30
Typ
Max
Units V
1 5 100 1.7 2.3 15.8 23 23
A nA V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
1250
0.85 22 11.7
nC nC nC nC ns ns ns ns
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
6 19 4.5 16.7 6.7 20
ns nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev 2: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
45 40 35 30 ID (A) ID(A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 26 24 22 RDS(ON) (m) 20 18 16 14 12 10 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 VGS=10V Normalized On-Resistance VGS=4.5V 1.6 ID=9A 1.4 VGS=4.5V 1.2 ID=7A VGS=10V 0 1.5 2 2.5 VGS=3V 3.5V 21 125C 14 10V 4.5V 4V 35 28 VDS=5V
13.4
7
25C
16 26
22
30.76 3.5
4
4.5
VGS(Volts) Figure 2: Transfer Characteristics
1
1.0E+01 1.0E+00
40 RDS(ON) (m)
ID=9A IS (A)
1.0E-01 125C 1.0E-02 25C 1.0E-03
30
125C
20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=9A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10
Coss
13.4 22
16 26
30
15 20 25 0.76 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 10s 10.0 ID (Amps) RDS(ON) limited 1ms 10ms DC 0.1 TJ(Max)=150C TA=25C
50 40 100s Power (W) 30 20 10 0 0.0001 TJ(Max)=150C TA=25C
1.0
0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.001
10 ZJA Normalized Transient Thermal Resistance
D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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